DEVELOPMENT OF V-BAND INTEGRATED CIRCUIT FREQUENCY UPCONVERTERS.
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abstract
The design and performance of a V-band (50-75 GHz) single sideband upconverter using GaAs beam lead Schottky barrier diodes are outlined. An output power of 0. 8 to 1. 2 dBm has been measured with the carrier fixed at 57 GHz, and the modulating signal swept from 3 to 7 GHz.