DEVELOPMENT OF V-BAND INTEGRATED CIRCUIT FREQUENCY UPCONVERTERS. Conference Paper uri icon

abstract

  • The design and performance of a V-band (50-75 GHz) single sideband upconverter using GaAs beam lead Schottky barrier diodes are outlined. An output power of 0. 8 to 1. 2 dBm has been measured with the carrier fixed at 57 GHz, and the modulating signal swept from 3 to 7 GHz.

published proceedings

  • Conference Digest - International Conference on Infrared and Millimeter Waves

author list (cited authors)

  • Nguyen, C., & Chang, K.

complete list of authors

  • Nguyen, C||Chang, K

publication date

  • December 1985