Miniature 0.25-μm CMOS distributed amplifier using on-chip inductors Conference Paper uri icon

abstract

  • A CMOS distributed amplifier incorporating on-chip patterned ground shield (PGS) spiral inductors has been developed using a standard low-cost 0.25-m CMOS process. Measured results show that this distributed amplifier has an average gain of 7 dB, return loss of more than 10 dB, and noise figure between 4.1-6.1 dB across DC-11 GHz. The amplifier occupies a small chip area of only 1.20.8 mm 2 including RF pads. These represent the best results for 0.25-m CMOS distributed amplifiers and demonstrate that miniaturization and high performance can be achieved for CMOS distributed amplifiers and other wideband RFICs by implementing on-chip PGS inductors. 2010 IEEE.

name of conference

  • 2010 IEEE International Symposium Antennas and Propagation and CNC-USNC/URSI Radio Science Meeting

published proceedings

  • 2010 IEEE Antennas and Propagation Society International Symposium

author list (cited authors)

  • Guan, X., Jin, Y., Huynh, C., & Nguyen, C.

citation count

  • 0

complete list of authors

  • Guan, X||Jin, Y||Huynh, C||Nguyen, C

publication date

  • July 2010

publisher