A 16.528 GHz 0.18-$mu$m BiCMOS Power Amplifier with Flat $19.4 pm 1.2$ dBm Output Power Academic Article

abstract

• A broadband fully integrated power amplifier (PA) with 3 dB bandwidth from 16.5 to 28 GHz was designed using a 0.18 m SiGe BiCMOS process. The PA consists of a drive amplifier and two parallel main amplifiers. Lumped-element Wilkinson power divider and combiner are especially used to combine the main amplifiers as well as to provide suppression for the harmonics through their inherent low-pass filtering characteristic. The PA exhibits measured gain of more than 34.5 dB and very flat output power of 19.4 1.2 dBm across 16.5-28 GHz, and power added efficiency (PAE) higher than 20% and 17% between 16-24.5 GHz and up to 28 GHz, respectively. Specifically at 24 GHz, it achieves 19.4 dBm output power, 22.3% PAE, and 37.6 dB gain. 2012 IEEE.

authors

• Nguyen, Cam Van

published proceedings

• IEEE Microwave and Wireless Components Letters

author list (cited authors)

• Kim, K., & Nguyen, C.

citation count

• 24

complete list of authors

• Kim, Kyoungwoon||Nguyen, Cam

publication date

• December 2013

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Microwave and Wireless Components Letters  Journal

Digital Object Identifier (DOI)

• 10.1109/lmwc.2013.2290219

start page

• 108

end page

• 110

volume

• 24

issue

• 2