A 16.5–28 GHz 0.18-$mu$m BiCMOS Power Amplifier with Flat $19.4 pm 1.2$ dBm Output Power
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A broadband fully integrated power amplifier (PA) with 3 dB bandwidth from 16.5 to 28 GHz was designed using a 0.18 μm SiGe BiCMOS process. The PA consists of a drive amplifier and two parallel main amplifiers. Lumped-element Wilkinson power divider and combiner are especially used to combine the main amplifiers as well as to provide suppression for the harmonics through their inherent low-pass filtering characteristic. The PA exhibits measured gain of more than 34.5 dB and very flat output power of 19.4 ± 1.2 dBm across 16.5-28 GHz, and power added efficiency (PAE) higher than 20% and 17% between 16-24.5 GHz and up to 28 GHz, respectively. Specifically at 24 GHz, it achieves 19.4 dBm output power, 22.3% PAE, and 37.6 dB gain. © 2012 IEEE.
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