A millimeter-wave 0.18-μm BiCMOS dual-band power amplifier
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A 0.18-m SiGe BiCMOS concurrent dual-band power amplifier (PA) was developed. The PA can work in concurrent dual-band mode at 25.5 and 37 GHz as well as single-band mode at 25.5 or 37 GHz. The measured results show that, in the single-band mode, the dual-band PA exhibits gain of 21.4 and 17 dB, maximum output power of 16 and 13 dBm, and maximum power added efficiency (PAE) of 10.6 % and 4.9 % at 25.5 and 37 GHz, respectively. In the dual-band mode, the maximum output power is 13 and 9.5 dBm at 25.5 and 37 GHz, respectively, and the total maximum PAE is 7.1 %. The concurrent dual-band PA has a chip size of 1.3 0.68 mm2 and consumes a dc current of 120 mA from a 3-V supply voltage. 2014 IEEE.
name of conference
2014 IEEE International Wireless Symposium (IWS)
2014 IEEE International Wireless Symposium (IWS 2014)
author list (cited authors)
Huynh, C., Bae, J., & Nguyen, C.
complete list of authors
Huynh, Cuong||Bae, Juseok||Nguyen, Cam