A Millimeter-Wave $0.18-mu {
m m}$ BiCMOS Dual-band Power Amplifier Conference Paper

abstract

• A 0.18-m SiGe BiCMOS concurrent dual-band power amplifier (PA) was developed. The PA can work in concurrent dual-band mode at 25.5 and 37 GHz as well as single-band mode at 25.5 or 37 GHz. The measured results show that, in the single-band mode, the dual-band PA exhibits gain of 21.4 and 17 dB, maximum output power of 16 and 13 dBm, and maximum power added efficiency (PAE) of 10.6 % and 4.9 % at 25.5 and 37 GHz, respectively. In the dual-band mode, the maximum output power is 13 and 9.5 dBm at 25.5 and 37 GHz, respectively, and the total maximum PAE is 7.1 %. The concurrent dual-band PA has a chip size of 1.3 0.68 mm2 and consumes a dc current of 120 mA from a 3-V supply voltage. 2014 IEEE.

name of conference

• 2014 IEEE International Wireless Symposium (IWS 2014)

authors

• Nguyen, Cam Van

published proceedings

• 2014 IEEE International Wireless Symposium (IWS 2014)

author list (cited authors)

• Huynh, C., Bae, J., & Nguyen, C.

citation count

• 0

complete list of authors

• Huynh, Cuong||Bae, Juseok||Nguyen, Cam

publication date

• March 2014

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

Digital Object Identifier (DOI)

• 10.1109/ieee-iws.2014.6864205

International Standard Book Number (ISBN) 13

• 9781479934034

start page

• 1

end page

• 3

URL

• http://dx.doi.org/10.1109/ieee-iws.2014.6864205