Some recent developments of millimeter-wave RFIC attenuators Conference Paper uri icon

abstract

  • 2016 IEEE. Recent developments of millimeter-wave CMOS radio frequency integrated circuit (RFIC) attenuators possessing switching and band-pass filtering functions are presented. The attenuators are developed using 0.18-m SiGe BiCMOS technology. The CMOS dual-function attenuator capable of switching is designed for 4-bit operations and 10-67-GHz bandwidth, which achieves measured attenuation flatness of 2.4- 6.8 dB, attenuation range of 32-42 dB, and isolation of 42-67 dB. The minimum attenuation is 8.4-15.2 dB across 10-67 GHz. The 1-dB compression power is greater than 14 dBm at 40 GHz. The CMOS dual-function attenuator with band-pass filtering response is designed for 3-bit operations and 44-GHz center frequency, which has measured insertion loss of 4.4-5.9 dB, RMS amplitude error of 0.8-1.4 dB, RMS phase error of 1.9-6.7 over 36-52 GHz, input P1dB higher than 20 dBm at 44 GHz, and band-pass-filtering response with stop-band rejections greater than 18 dB at 24 and 64 GHz.

name of conference

  • 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

published proceedings

  • 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

author list (cited authors)

  • Bae, J., & Nguyen, C.

citation count

  • 0

complete list of authors

  • Bae, Juseok||Nguyen, Cam

publication date

  • May 2016

publisher