Design of a K-band power amplifier for high gain, output power and efficiency on 0.18-m SiGe BiCMOS process Conference Paper uri icon


  • Copyright 2014 IEICE. The design of a K-band power amplifier (PA) on a 0.18 m SiGe BiCMOS process for high gain, output power and power-aided efficiency (PAE) is presented. The designed PA is composed of a drive amplifier, two identical main amplifiers, and lumped-element Wilkinson power divider and combiner. The PA achieves 37.5-39.5 dB of small-signal gain, 18.6-20.6 dBm of saturated output power, and 18-29% of PAE over the entire K-band (18-26.5 GHz). Specifically at 24 GHz, it achieves 19.4 dBm output power, 22.3% PAE, and 37.6-dB gain.

published proceedings

  • 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

author list (cited authors)

  • Kim, K., & Nguyen, C.

complete list of authors

  • Kim, K||Nguyen, C

publication date

  • March 2014