RF low-noise amplifiers in BiCMOS technologies Academic Article

abstract

• This paper deals with the design of low-noise amplifiers (LNA) fabricated in BiCMOS technologies. The LNA's are based on an active inductor, which makes the topologies less sensitive to temperature variations and reduces the effects of process parameter tolerances. Experimental results show a 10-dB voltage gain at 1 GHz and unity-gain frequencies of 3.6 GHz. The noise figure, measured at 1 GHz, is 3.4 dB. The preamplifier has been fabricated using a 10-GHz BiCMOS technology.

authors

• Silva-Martinez, Jose

published proceedings

• IEEE Transactions on Circuits and Systems I Regular Papers

author list (cited authors)

• Carreto-Castro, F., Silva-Martinez, J., & Murphy-Arteaga, R.

citation count

• 11

complete list of authors

• Carreto-Castro, F||Silva-Martinez, J||Murphy-Arteaga, R

publication date

• July 1999

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• n1057-7130ISSN  Journal

Digital Object Identifier (DOI)

• 10.1109/82.775398

start page

• 974

end page

• 977

volume

• 46

issue

• 7

URL

• http://dx.doi.org/10.1109/82.775398