Design of an energy-efficient silicon microring resonator-based photonic transmitter Academic Article uri icon


  • Silicon microring resonator-based photonic interconnects offer an attractive substitute to conventional electrical interconnects due to the negligible frequency-dependent channel loss and high bandwidth density offered via wavelength-division multiplexing (WDM). This paper presents silicon photonic transmitters employing ring modulators designed in a 130 nm SOI process wire-bonded with CMOS drivers in a 1V standard 65nm CMOS technology. The transmitter circuits incorporate high-swing (2Vpp and 4Vpp) drivers with non-linear pre-emphasis to bypass the bandwidth limitation of the carrier-injection silicon ring modulator. The 1st generation silicon ring modulator wire-bonded with 4Vpp CMOS driver achieves 12.7dB extinction ratio at 5Gb/s with 4.04mW power consumption, while the 2nd generation ring modulator wirebonded with 2Vpp CMOS driver achieves 9.2dB extinction ratio at 9Gb/s with 4.32mW. Both of these measurements exclude the laser power. 2014 Hewlett-Packard Development Company, L.P.

published proceedings

  • HP Laboratories Technical Report

author list (cited authors)

  • Li, C., Chen, C. H., Wang, B., Palermo, S., Fiorentino, M., & Beausoleil, R.

complete list of authors

  • Li, C||Chen, CH||Wang, B||Palermo, S||Fiorentino, M||Beausoleil, R

publication date

  • January 2014