Optoelectronic parametric amplification in a microstrip ring resonator on GaAs substrate Academic Article uri icon


  • Nonlinear interaction between an optically modulated RF input and a microwave LO (local oscillator) in a nonlinear microstrip ring resonator on a semi-insulating GaAs (gallium arsenide) substrate is investigated. When the capacitive reactance of the detector is modulated, a parametric amplification effect of the mixer occurs. In this device structure, a parametric amplification gain of 10 dB without applied bias in the RF signal is obtained. This microwave optoelectronic mixer can be used in fiber-optic communication links.

published proceedings

  • Japanese Journal of Applied Physics, Part 2: Letters

author list (cited authors)

  • Lee, J. C., Yeh, C. L., Ho, C. H., Taylor, H. F., Weichold, M. H., & Chang, K.

complete list of authors

  • Lee, JC||Yeh, CL||Ho, CH||Taylor, HF||Weichold, MH||Chang, K

publication date

  • December 1997