Junction characteristics of CdS/CdTe solar cells Academic Article uri icon

abstract

  • Two different device types were produced and analyzed at Photon Energy, Inc., with the help of the Photovoltaic Measurements and Performance branch at the Solar Energy Research Institute. Results were achieved using electron-beam-induced currents, biased capacitance vs. frequency, diode curve analysis in the dark and the light, spectral response of the I sc perturbations under various biasing conditions, and response of V oc , I sc perturbations, and V oc perturbations at various white bias light intensities. Analysis of the results supports the conclusion that changes in the reverse diode saturation current are primarily responsible for the large differences between cell types. Recombination velocities at interface states and/ or deep levels have a significant effect on the electronic characteristics of these CdS/CdTe devices. Reduction of the effect of these interface states to reduce the reverse saturation current results in higher efficiency devices. 1988.

published proceedings

  • Solar Cells

author list (cited authors)

  • Albright, S. P., Singh, V. P., & Jordan, J. F.

citation count

  • 21

complete list of authors

  • Albright, SP||Singh, VP||Jordan, JF

publication date

  • May 1988