A Concurrent Dual-band Low-Noise Amplifier for K- and Ka-band Applications in SiGe BiCMOS Technology Conference Paper

abstract

• A 24/35-GHz BiCMOS concurrent dual-band low-noise amplifier (DBLNA) has been developed. The proposed concurrent DBLNA was designed using new active notch filters embedded into a wideband LNA. The concurrent DBLNA has measured peak gains of 21.9/16.6 dB at 23.5/35.7 GHz, respectively. The measured 3-dB bandwidths of the low and high pass-bands are 7.7 GHz (18.8-26.5 GHz) and 8.8 GHz (32.8-41.6 GHz), respectively. The best noise figures measured in the passbands are 5.1/7.2 dB at 22/35.6 GHz, respectively. The measured IIP 3 performances are -10.4/-8.3 dBm at 24/35 GHz, respectively. 2013 IEEE.

name of conference

• 2013 Asia-Pacific Microwave Conference Proceedings (APMC)

authors

• Nguyen, Cam Van

published proceedings

• 2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013)

author list (cited authors)

• Lee, J., & Nguyen, C.

citation count

• 11

complete list of authors

• Lee, Jaeyoung||Nguyen, Cam

publication date

• November 2013

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• Bicmos
• Cmos
• Dual-band
• Low-noise Amplifiers
• Millimeter-wave
• Multiband
• Notch Filters
• Rfic

Digital Object Identifier (DOI)

• 10.1109/apmc.2013.6695112

International Standard Book Number (ISBN) 13

• 9781479914746

start page

• 258

end page

• 260

URL

• http://dx.doi.org/10.1109/apmc.2013.6695112