A CMOS Sensor Array IC of Nanowell Devices for Molecular Sensing Conference Paper

abstract

• This paper demonstrates a CMOS integrated sensor IC for an array of novel nanowell devices used for molecular sensing. The size of the nanowell (10-100nm) enables high-fidelity detection and analysis through broadband dielectric spectroscopy (BDS) of the parallel-plate capacitor formed by the nanowell and the trapped molecule. The signal transduction is done by a novel, continuous-time detector circuit followed by a low-noise lock-in architecture which measures the admittance of the sensor as a function of frequency for BDS. The CMOS IC has a capacitance resolution of 14 aF (frequency 1Hz - 1GHz) and power consumption of only 30W/channel. The CMOS front-end are implemented in TSMC 0.18 technology. 2004 IEEE.

name of conference

• Proceedings of IEEE Sensors, 2004.

authors

• Kish, Laszlo

published proceedings

• Proceedings of IEEE Sensors, 2004.

author list (cited authors)

• Sonkusale, S. R., Cheng, M., Kish, L., Agarwal, A., Kim, Y., Liu, C., & Seo, S.

citation count

• 6

complete list of authors

• Sonkusale, SR||Cheng, M||Kish, L||Agarwal, A||Kim, Y||Liu, C||Seo, S

publication date

• January 2004

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• Admittance Measurement
• CMOS Integrated Circuits
• Capacitance
• Capacitors
• Detectors
• Dielectric Measurements
• Electrochemical Impedance Spectroscopy
• Frequency Measurement
• Nanoscale Devices
• Sensor Arrays

Digital Object Identifier (DOI)

• 10.1109/icsens.2004.1426332

start page

• 963

end page

• 966

volume

• 2

URL

• http://dx.doi.org/10.1109/icsens.2004.1426332