Porous silicon field emission cathode development Conference Paper uri icon


  • This paper will address the development of a porous silicon cathode technology which shows promise in solving the existing problems, specifically unstable, low current density, non-reproducible and high voltage emission, encountered by other cathode technologies. Monolithic two- and three-terminal devices have been designed, manufactured, and characterized. All of these devices have resulted in stable, reproducible operating characteristics that follow the Fowler-Nordheim model. Vacuum transport of the electrons and temperature independence (to 250C) of the I-V characteristics have been confirmed. Appreciable emission current has been observed with macroscopic fields on the order of 104 V/cm, thus indicating a large submicroscopic field enhancement due to the geometrical nature of the porous silicon.

published proceedings

  • Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

author list (cited authors)

  • Jessing, J. R., Parker, D. L., & Weichold, M. H.

complete list of authors

  • Jessing, JR||Parker, DL||Weichold, MH

publication date

  • December 1995