FABRICATION AND LOW-TEMPERATURE TRANSPORT STUDIES OF SUBMICRON, INPLANE GATED FETS DEFINED BY LOW-ENERGY ION EXPOSURE Conference Paper

abstract

• ABSTRACTNanoscale gated quantum wires in GaAs MODFET material with the conduction channel and gates in the plane of the 2DEG have been fabricated and studied. Electron beam lithography was used for mask definition followed by flood exposure to low energy argon ions (150 eV) for pattern transfer into the 2DEG. Compared to metal top-gate designs the in-plane design simplifies fabrication and reduces device capacitance, promising ultra-fast operation. This method of pattern transfer produced devices having channel-to-gate isolation of 1014 and breakdown fields above 106 V/cm at 4.2 K. In addition to exhibiting standard FET characteristics, including gating to pinchoff, the devices showed significant negative differential resistance (NDR) in the saturation region.

authors

• Weichold, Mark

published proceedings

• III-V ELECTRONIC AND PHOTONIC DEVICE FABRICATION AND PERFORMANCE

author list (cited authors)

• ANDREWS, C. C., SPENCER, G. F., LI, F., WEICHOLD, M. H., & KIRK, W. P.

citation count

• 1

complete list of authors

• ANDREWS, CC||SPENCER, GF||LI, F||WEICHOLD, MH||KIRK, WP

publication date

• December 1993

publisher

• Springer Nature  Publisher

published in

• MRS Online Proceedings Library  Journal

keywords

• 40 Engineering
• 4018 Nanotechnology
• 7 Affordable And Clean Energy

Digital Object Identifier (DOI)

• 10.1557/PROC-300-67

International Standard Book Number (ISBN) 10

• 1-55899-196-4

start page

• 67

end page

• 72

volume

• 300

URL

• http://dx.doi.org/10.1557/proc-300-67

user-defined tag

• 7 Affordable and Clean Energy