MESFET fabrication and hall mobility measurements in LPE-grown InxGa1xP layers lattice-matched to GaAs
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The procedure for the LPE growth of indium gallium phosphide layers lattice matched to (111)B and (100) semiinsulating gallium arsenide is presented. The growth uses a self correcting technique and a growth temperature of 748C. The resulting layer thicknesses and surface morphologies are presented. The electron Hall mobilities were measured for these layers from 17C to 245C. The mobilities measured varied from 1500 cm2/v - s to 450 cm2/v - s decreasing at elevated temperatures. In addition the fabrication and demonstration of MESFETs in this material are reported. 1986.
author list (cited authors)
Johnson, R. H., & Weichold, M. H.
complete list of authors
Johnson, RH||Weichold, MH