MESFET fabrication and hall mobility measurements in LPE-grown InxGa1−xP layers lattice-matched to GaAs Academic Article uri icon

abstract

  • The procedure for the LPE growth of indium gallium phosphide layers lattice matched to (111)B and (100) semiinsulating gallium arsenide is presented. The growth uses a self correcting technique and a growth temperature of 748°C. The resulting layer thicknesses and surface morphologies are presented. The electron Hall mobilities were measured for these layers from 17°C to 245°C. The mobilities measured varied from 1500 cm2/v - s to 450 cm2/v - s decreasing at elevated temperatures. In addition the fabrication and demonstration of MESFETs in this material are reported. © 1986.

published proceedings

  • Solid-State Electronics

author list (cited authors)

  • Johnson, R. H., & Weichold, M. H

citation count

  • 1

complete list of authors

  • Johnson, RH||Weichold, MH

publication date

  • August 1986