SIMULATION OF DEFECT ASSISTED TUNNELING AND ITS EFFECT ON IV CHARACTERISTICS IN RESONANT TUNNELING DIODES Conference Paper uri icon

abstract

  • This paper presents a selfconsistent IV simulation technique for an RTD with defect wells placed inside the barriers. The motivation of this paper was to model the excess valley current by a defectassisted tunneling mechanism. We have calculated the transmission coefficients and IV characteristics self consistently with Poisson's equation coupled to quantum mechanical tunneling through the barrier. The shape of transmission coefficient was broadened and greatly enhanced in the offresonance region when the defect well was introduced in the barriers. Our results gave a good qualitative estimation of the valley current and the peak to valley current ratio (PVCR).

published proceedings

  • COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

author list (cited authors)

  • Lee, S., Weichold, M. H., Parker, D. L., & Spencer, G. F.

citation count

  • 0

complete list of authors

  • Lee, Sangyong||Weichold, Mark H||Parker, Donald L||Spencer, Gregory F

publication date

  • April 1993