IMAGING LATCH-UP SITES IN CMOS INTEGRATED-CIRCUITS USING LASER SCANNING Academic Article uri icon

abstract

  • A novel approach to using laser scanning to analyze latch-up sites in complementary metal-oxide semiconductor (CMOS) integrated circuits (IC's) has been developed. The technique employs a continuous wave (CW) laser beam scanned across a CMOS IC as the power to the IC is modulated. Signals corresponding to latch-up currents are detected with a lock-in amplifier and are used to produce a two-dimensional image of latch-up sites on a high resolution monitor. 1986 IEEE

published proceedings

  • IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY

author list (cited authors)

  • WEICHOLD, M. H., PARKER, D. L., & FENECH, J. F.

citation count

  • 2

complete list of authors

  • WEICHOLD, MH||PARKER, DL||FENECH, JF

publication date

  • December 1985