Low cost, a high-integrated capability, and low-power consumption are the basic requirements for ultra wide band (UWB) system design in order for the system to be adopted in various commercial electronic devices in the near future. Thus, the highly integrated transceiver is trended to be manufactured by companies using the latest silicon based complimentary metal-oxide-silicon (CMOS) processes. In this dissertation, several new structural designs are proposed, which provide solutions for some crucial RF blocks in CMOS for UWB for commercial applications. In this dissertation, there is a discussion of the development, as well as an illustration, of a fully-integrated ultra-broadband transmit/receive (T/R) switch which uses nMOS transistors with deep n-well in a standard 0.18-um CMOS process. The new CMOS T/R switch exploits patterned-ground-shield on-chip inductors together with MOSFET's parasitic capacitances in order to synthesize artificial transmission lines which result in low insertion loss over an extremely wide bandwidth. Within DC-10 GHz, 10-18 GHz, and 18-20 GHz, the developed CMOS T/R switch exhibits insertion loss of less than 0.7, 1.0 and 2.5 dB and isolation between 32-60 dB, 25-32 dB, and 25-27 dB, respectively. The measured 1-dB power compression point and input third-order intercept point reach as high as 26.2 and 41 dBm, respectively. Further, there is a discussion and demonstration of a tunable Carrier-based Time-gated UWB transmitter in this dissertation which uses a broadband multiplier, a novel fully integrated single pole single throw (SPST) switch designed by the CMOS process, where a tunable instantaneous bandwidth from 500 MHz to 4 GHz is exhibited by adjusting the width of the base band impulses in time domain. The SPST switch utilizes the synthetic transmission line concept and multiple reflections technique in order to realize a flat insertion loss less than 1.5 dB from 3.1 GHz to 10.6 GHz and an extremely high isolation of more than 45 dB within this frequency range. A fully integrated complementary LC voltage control oscillator (VCO), designed with a tunable buffer, operates from 4.6 GHz to 5.9 GHz. The measurement results demonstrate that the integrated VCO has a very low phase noise of -117 dBc/ Hz at 1 MHz offset. The fully integrated VCO achieves a very high figure of merit (FOM) of 183.5 using standard CMOS process while consuming 4 mA DC current.
