Test of the scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs
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We show that once the effects of valley splitting and intervalley scattering are incorporated, the two-parameter scaling theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures. The observed large enhancement of the conductance and the effective electron-electron interaction amplitude as the temperature is lowered are explained quantitatively. 2010 The American Physical Society.
author list (cited authors)
Punnoose, A., Finkelstein, A. M., Mokashi, A., & Kravchenko, S. V.
complete list of authors
Punnoose, Alexander||Finkel’stein, Alexander M||Mokashi, A||Kravchenko, SV