Technology Scaling Issues of an IDDQ Built-In Current Sensor Conference Paper uri icon

abstract

  • Analysis and comparison of 1.5 μm and 350 nm CMOS test chip results of a built-in current sensor design reveal several critical design issues. This paper includes a discussion of these issues. The success of the sensor design hinges on how these issues are addressed in order to achieve successful operation during technology scaling.

author list (cited authors)

  • Xue, B., & Walker, D.

citation count

  • 1

publication date

  • January 2005

publisher