A relation model of gate oxide yield and reliability Academic Article uri icon

abstract

  • The relationship between yield and reliability is obviously important for predicting and improving reliability during the early production stage, especially for new technologies. Previous research developed models to relate yield and reliability when reliability is defined as the probability of a device having no reliability defects. This definition of reliability is not a function of mission time and thus is not consistent with reliability estimated from the time-to-first-failure data which is commonly used. In this paper, we present a simple model to tie oxide yield to time-dependent reliability by combining the oxide time to breakdown model with a defect size distribution. We show that existing models become special cases when a single mission time is considered. As the proposed reliability function has a decreasing failure rate, the result is useful for a manufacturer seeking to find an optimal burn-in policy for burn-in temperature, burn-in voltage, and burn-in time. 2003 Elsevier Ltd. All rights reserved.

published proceedings

  • Microelectronics Reliability

author list (cited authors)

  • Kim, K. O., Kuo, W., & Luo, W.

citation count

  • 19

complete list of authors

  • Kim, Kyungmee O||Kuo, Way||Luo, Wen

publication date

  • March 2004