Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide Academic Article uri icon

abstract

  • Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25-250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. The understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.

altmetric score

  • 19

author list (cited authors)

  • Bayu Aji, L. B., Wallace, J. B., Shao, L., & Kucheyev, S. O.

citation count

  • 14

publication date

  • November 2016