Modification of SRIM-calculated dose and injected ion profiles due to sputtering, injected ion buildup and void swelling Academic Article uri icon

abstract

  • 2016 Elsevier B.V. In radiation effects on materials utilizing self-ion irradiations, it is necessary to calculate the local displacement damage level and ion injection profile because of the short distance that self-ions travel in a material and because of the strong variation of displacement rate with depth in a specimen. The most frequently used tool for this is the software package called Stopping and Range of Ions in Matter (SRIM). A SRIM-calculated depth-dependent dose level is usually determined under the implicit assumption that the target does not undergo any significant changes in volume during the process, in particular SRIM ignores the effect of sputtering, injected ions, and void swelling on the redistribution of the dose and injected ion profiles. This approach become increasingly invalid as the ion fluence reaches ever higher levels, especially for low energy ion irradiations. The original surface is not maintained due to sputter-induced erosion, while within the irradiated region of the specimen, injected ions are adding material, and if void swelling is occurring, it is creating empty space. An iterative mathematical treatment of SRIM outputs to produce corrected dose and injected ion profiles based on these phenomenon and without regard to diffusion is presented along with examples of differences between SRIM-calculated values and corrected values over a range of typical ion energies. The intent is to provide the reader with a convenient tool for more accurately calculating dose and injected ion profiles for heavy-ion irradiations.

published proceedings

  • NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

author list (cited authors)

  • Wang, J., Toloczko, M. B., Bailey, N., Garner, F. A., Gigax, J., & Shao, L.

citation count

  • 29

complete list of authors

  • Wang, Jing||Toloczko, Mychailo B||Bailey, Nathan||Garner, Frank A||Gigax, Jonathan||Shao, Lin

publication date

  • November 2016