A highly linear low-noise amplifier Academic Article

abstract

• A low-noise amplifier (LNA) that achieves high third-order input intercept point (IIP3) at RF frequencies using a nonlinearity cancellation technique is proposed. The circuit tackles the problem of the effect of the second-order nonlinearity on IIP3 at RF frequencies. The circuit functionality is analyzed using Volterra series. The linear LNA was designed and fabricated in a TSMC 0.35-m CMOS process. An IIP3 of +21 dBm was achieved with a gain of 11.5 dB, noise figure of 2.95 dB, and a power consumption of 9 mA at 2.5 V. 2006 IEEE.

authors

• Silva-Martinez, Jose

published proceedings

• IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

altmetric score

• 6

author list (cited authors)

• Ganesan, S., Sanchez-Sinencio, E., & Silva-Martinez, J.

citation count

• 83

complete list of authors

• Ganesan, Sivakumar||Sanchez-Sinencio, Edgar||Silva-Martinez, Jose

publication date

• December 2006

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• Low-noise Amplifier (lna)
• Nonlinearity
• Third-order Input Intercept Point (iip3)
• Third-order Intermodulation (im3)
• Volterra Series

Digital Object Identifier (DOI)

• 10.1109/TMTT.2006.885889

URI

• https://hdl.handle.net/1969.1/5928

start page

• 4079

end page

• 4085

volume

• 54

issue

• 12

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Ftmtt.2006.885889