Transconductance amplifier structures with very small transconductances: A comparative design approach Academic Article uri icon

abstract

  • A family of CMOS operational transconductance amplifiers (OTAs) has been designed for very small G m's (of the order of nanoamperes per volt) with transistors operating in moderate inversion. Several OTA design schemes such as conventional, using current division, floating-gate, and bulk-driven techniques are discussed. A detailed comparison has also been made among these schemes in terms of performance characteristics such as power consumption, active silicon area, and signal-to-noise ratio. The transconductance amplifiers have been fabricated in a 1.2-m n-well CMOS process and operate at a power supply of 2.7 V. Chip test results are in good agreement with theoretical results.

published proceedings

  • IEEE JOURNAL OF SOLID-STATE CIRCUITS

altmetric score

  • 3

author list (cited authors)

  • Veeravalli, A., Sanchez-Sinencio, E., & Silva-Martinez, J.

citation count

  • 146

complete list of authors

  • Veeravalli, A||Sanchez-Sinencio, E||Silva-Martinez, J

publication date

  • June 2002