A 1.3-V 5-Mw Fully Integrated Tunable Bandpass Filter at 2.1 Ghz in 0.35-${mu}{
m m}$ Cmos Academic Article uri icon

abstract

  • A 2.1-GHz 1.3-V 5-mW fully integrated Q-enhancement LC bandpass blquad programmable in fo Q, and peak gain is implemented in 0.35-μm standard CMOS technology. The filter uses a resonator built with spiral inductors and inversion-mode pMOS capacitors that provide frequency tuning. The Q tuning is through an adjustable negative-conductance generator, whereas the peak gain is tuned through an input Gm stage. Noise and non-linearity analyses presented demonstrate the design tradeoffs involved. Measured frequency tuning range around 2.1 GHz is 13%. Spiral inductors with Qo of 2 at 2.1 GHz limit the spurious-free dynamic range (SFDR) at 31-34 dB within the frequency tuning range. Measurements show that the peak gain can be tuned within a range of around two octaves. The filter sinks 4 mA from a 1.3-V supply providing a Q of 40 at 2.19 GHz with a 1-dB compression point dynamic range of 35 dB. The circuit operates with supply voltages ranging from 1.2 to 3 V. The silicon area is 0.1 mm2.

altmetric score

  • 3

author list (cited authors)

  • Dülger, F., Sánchez-Sinencio, E., & Silva-Martínez, J.

citation count

  • 60

publication date

  • June 2003