A systematic study on analysis-induced radiation damage in silicon during channeling Rutherford backscattering spectrometry analysis Academic Article

abstract

• Channeling Rutherford backscattering spectrometry (RBS) is an essential analysis technique in materials science. However, the accuracy of RBS can be significantly affected by disorders in materials induced by the analyzing ion beam even under channeling mode. We have studied RBS analysis-induced radiation damage in silicon. A 140-keV H + ion beam was incident along 1 0 0 Si axis at room temperature to a fluence ranging from 1.6 10 16 cm -2 to 7.0 10 16 cm -2. The evolution of the aligned yields versus fluences has been examined and found to agree well with a model proposed by us. 2008 Elsevier B.V. All rights reserved.

authors

• Shao, Lin

published proceedings

• NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

author list (cited authors)

• Gachon, G., Martin, M., Carter, J., Hollander, M., & Shao, L.

citation count

• 2

complete list of authors

• Gachon, Gwenaelle||Martin, Michael||Carter, Jesse||Hollander, Mark||Shao, Lin

publication date

• May 2008

publisher

• Elsevier  Publisher

published in

• Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  Journal

keywords

• Dechanneling
• Displacements
• Ion Beam Analysis
• Rutherford Backscattering Spectrometry

Digital Object Identifier (DOI)

• 10.1016/j.nimb.2008.03.025

start page

• 2466

end page

• 2469

volume

• 266

issue

• 10

URL

• http%3A%2F%2Fdx.doi.org%2F10.1016%2Fj.nimb.2008.03.025