Damage creation in ion irradiated Si_1-xGe_x/Si structures Academic Article

abstract

• Strained SiGe/Si structures have been proposed as substrates for fabrication of high speed metal oxide semiconductor transistors. However, influence of strain and/or presence of Ge atoms on damage creation during ion irradiation have not been explored to a significant extent. In this study, Rutherford backscattering spectrometry (RBS) was used to characterize Si1-xGex/Si structures irradiated by 140 keV He+ ions at room temperature. When compared with pure Si, strained samples show enhanced damage accumulation as a function of He fluence. Channeling angular scans did not reveal any specific configuration of displacements. Possible mechanisms for enhanced damage in strained Si are discussed. 2008 Elsevier B.V. All rights reserved.

authors

• Shao, Lin

published proceedings

• NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

author list (cited authors)

• Martin, M., Thompson, P. E., Carter, J., Zhu, L., Hollander, M., & Shao, L.

citation count

• 1

publication date

• May 2008

publisher

• Elsevier  Publisher

keywords

• Ion Beam Analysis
• Radiation Damage
• Rutherford Backscattering
• Silicon
• Silicon Germanium
• Strained Silicon

Digital Object Identifier (DOI)

• 10.1016/j.nimb.2008.03.028

start page

• 2483

end page

• 2485

volume

• 266

issue

• 10

URL

• http://dx.doi.org/10.1016/j.nimb.2008.03.028