Defect Characterization in He Implanted Si Conference Paper uri icon

abstract

  • Conventional and high resolution transmission electron microscopes are used to characterize helium ion- implanted Si. 140 keV He ions were implanted into (100) Si to a fluence of 1 xl017/cm2. After annealing at 873 K for lh, various linear and planar defects are formed. No He bubbles are observed. After annealing at 1223 K for lh, large voids and perfect dislocation loops are formed. A stress field around the voids and the spherical shape of the voids suggest the retention of He gas atoms inside the bubble. © 2009 American Institute of Physics.

altmetric score

  • 0.25

author list (cited authors)

  • Denadai, E. P., Rusakova, I., Carter, J., Martin, M., Aitkaliyeva, A., & Shao, L.

citation count

  • 0

publication date

  • January 1, 2009 11:11 AM
  • March 2009

publisher

  • AIP  Publisher