Defect Characterization in He Implanted Si Conference Paper

abstract

• Conventional and high resolution transmission electron microscopes are used to characterize helium ion- implanted Si. 140 keV He ions were implanted into (100) Si to a fluence of 1 xl017/cm2. After annealing at 873 K for lh, various linear and planar defects are formed. No He bubbles are observed. After annealing at 1223 K for lh, large voids and perfect dislocation loops are formed. A stress field around the voids and the spherical shape of the voids suggest the retention of He gas atoms inside the bubble. 2009 American Institute of Physics.

name of conference

• AIP Conference Proceedings

authors

• Shao, Lin

published proceedings

• APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY

altmetric score

• 0.5

author list (cited authors)

• Denadai, E. P., Rusakova, I., Carter, J., Martin, M., Aitkaliyeva, A., & Shao, L.

citation count

• 0

complete list of authors

• Denadai, Eduardo Perez||Rusakova, Irene||Carter, Jesse||Martin, Michael||Aitkaliyeva, Assel||Shao, Lin

publication date

• March 2009

publisher

• AIP Publishing  Publisher

published in

• AIP Conference Proceedings  Journal

keywords

• Defects
• Gas Atom Implantation
• Ion Irradiation
• Voids

Digital Object Identifier (DOI)

• 10.1063/1.3119983

International Standard Book Number (ISBN) 13

• 978-0-7354-0633-9

start page

• 1006

end page

• 1009

volume

• 1099

issue

• 1

URL

• http://dx.doi.org/10.1063/1.3119983