Defect Characterization in He Implanted Si Conference Paper uri icon

abstract

  • Conventional and high resolution transmission electron microscopes are used to characterize helium ion- implanted Si. 140 keV He ions were implanted into (100) Si to a fluence of 1 xl017/cm2. After annealing at 873 K for lh, various linear and planar defects are formed. No He bubbles are observed. After annealing at 1223 K for lh, large voids and perfect dislocation loops are formed. A stress field around the voids and the spherical shape of the voids suggest the retention of He gas atoms inside the bubble. 2009 American Institute of Physics.

name of conference

  • APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: Twentieth International Conference

published proceedings

  • APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY

altmetric score

  • 0.5

author list (cited authors)

  • Denadai, E. P., Rusakova, I., Carter, J., Martin, M., Aitkaliyeva, A., & Shao, L.

citation count

  • 0

complete list of authors

  • Denadai, Eduardo Perez||Rusakova, Irene||Carter, Jesse||Martin, Michael||Aitkaliyeva, Assel||Shao, Lin

publication date

  • March 2009

publisher

  • AIP  Publisher