High thermal stability of vacancy clusters formed in MeV Si-self-ion-implanted Si Academic Article uri icon


  • We have shown that considerable vacancy defects, introduced by MeV Si self-ion implantation, can survive a 900 °C5 min annealing for gate formation. By analyzing the trap-limited Si interstitial diffusion, we have characterized these vacancy clusters. Furthermore, we show that the remaining vacancies are sufficient to reduce B diffusion. The study suggests that MeV ion implantation, a promising approach for ultrashallow junction formation in metal-oxide-semiconductor device fabrication, can be inserted before gate formation (involving high temperature annealing) to avoid irradiation damage on gate structures. © 2008 American Institute of Physics.

author list (cited authors)

  • Shao, L., Thompson, P. E., Chen, Q. Y., B., K., Liu, J. R., & Chu, W.

publication date

  • January 1, 2008 11:11 AM