High thermal stability of vacancy clusters formed in MeV Si-self-ion-implanted Si
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We have shown that considerable vacancy defects, introduced by MeV Si self-ion implantation, can survive a 900 °C5 min annealing for gate formation. By analyzing the trap-limited Si interstitial diffusion, we have characterized these vacancy clusters. Furthermore, we show that the remaining vacancies are sufficient to reduce B diffusion. The study suggests that MeV ion implantation, a promising approach for ultrashallow junction formation in metal-oxide-semiconductor device fabrication, can be inserted before gate formation (involving high temperature annealing) to avoid irradiation damage on gate structures. © 2008 American Institute of Physics.
author list (cited authors)
Shao, L., Thompson, P. E., Chen, Q. Y., B., K., Liu, J. R., & Chu, W.