The role of strain in hydrogenation induced cracking in Si/Si_1-xGe_x/Si structures Academic Article

abstract

• Hydrogenation induced cracking in molecular beam epitaxy grown SiSi1xGexSi heterostructures is studied. The Si1xGex layer buried between an 200nm thick Si capping layer and the Si substrate is 5nm thick. After plasma hydrogenation, long range H migration and H trapping at the Si1xGex layer are observed. With increasing Ge concentrations, the amount of H trapping increases, cracking along the Si1xGex layer is smoother, and fewer defects are formed in the Si capping layer. The study suggests maximizing the interfacial strain to achieve the smoothest cracking with minimized radiation damage for ultrathin silicon-on-insulator technology.

authors

• Nastasi, Michael
• Shao, Lin

published proceedings

• APPLIED PHYSICS LETTERS

author list (cited authors)

• Shao, L., Di, Z., Lin, Y., Jia, Q. X., Wang, Y. Q., Nastasi, M., ... Chu, P. K.

citation count

• 9

complete list of authors

• Shao, Lin||Di, Zengfeng||Lin, Yuan||Jia, QX||Wang, YQ||Nastasi, M||Thompson, Phillip E||Theodore, N David||Chu, Paul K

publication date

• July 2008

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

keywords

• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1063/1.2963489

start page

• 041909

volume

• 93

issue

• 4

URL

• http://dx.doi.org/10.1063/1.2963489