Ion-irradiation-induced athermal annealing of helium bubbles in SiC Academic Article

abstract

• We have compared the microstructural evolution of helium bubbles under ion irradiation and high temperature annealing. 4H-SiC was irradiated first by 140 keV He ions to a fluence of 1.0 1017 cm-2 and then annealed at 1200 K for 30 min. Then, the samples were either irradiated by 2 MeV He ions to a fluence of 3.0 1016 cm-2 at room temperature or annealed additionally at 1200 K for 30 min. Before and after 2 MeV He ion irradiation, significant microstructural changes were observed, similar to effects of high temperature annealing. Thus, the study provides evidence of ion-irradiation-induced athermal annealing on defect Ostwald ripening process and bubble evolution. Possible mechanisms are discussed. 2010 Elsevier B.V. All rights reserved.

authors

• Shao, Lin

published proceedings

• NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

author list (cited authors)

• Hua, W., Yao, S., Theodore, N. D., Wang, X., Chu, W., Martin, M., & Shao, L.

citation count

• 6

complete list of authors

• Hua, Wei||Yao, Shu-De||Theodore, N David||Wang, Xue-Mei||Chu, Wei-Kan||Martin, Michael||Shao, Lin

publication date

• July 2010

publisher

• Elsevier  Publisher

published in

• Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  Journal

keywords

• Athermal Annealing
• He Bubbles
• Ion Irradiation
• Silicon Carbide

Digital Object Identifier (DOI)

• 10.1016/j.nimb.2010.04.004

start page

• 2325

end page

• 2328

volume

• 268

issue

• 14

URL

• http%3A%2F%2Fdx.doi.org%2F10.1016%2Fj.nimb.2010.04.004