Evidence for ion irradiation induced dissociation and reconstruction of Si–H bonds in hydrogen-implanted silicon
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We observe that H-related chemical bonds formed in H-implanted Si will evolve under subsequent ion irradiation. During ion irradiation hydrogen is inclined to dissociate from simple H-related defect complexes (i.e., VHx and IHx), diffuse, and attach to vacancy-type defects resulting in new platelet formation, which facilitate surface blistering after annealing, a process completely inhibited in the absence of ion irradiation. The understanding of our results provides insight into the structure and stability of hydrogen-related defects in silicon. © 2008 American Institute of Physics.
author list (cited authors)
Di, Z. F., Wang, Y. Q., Nastasi, M., Shao, L., Lee, J. K., & Theodore, N. D.