Cracking in hydrogen ion-implanted Si∕Si0.8Ge0.2∕Si heterostructures
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We demonstrate that a controllable cracking can be realized in Si with a buried strain layer when hydrogen is introduced using traditional H-ion implantation techniques. However, H stimulated cracking is dependent on H projected ranges; cracking occurs along a Si0.8 Ge0.2 strain layer only if the H projected range is shallower than the depth of the strained layer. The absence of cracking for H ranges deeper than the strain layer is attributed to ion-irradiation induced strain relaxation, which is confirmed by Rutherford-backscattering-spectrometry channeling angular scans. The study reveals the importance of strain in initializing continuous cracking with extremely low H concentrations. © 2008 American Institute of Physics.
author list (cited authors)
Shao, L., Wang, Y. Q., Swadener, J. G., Nastasi, M., Thompson, P. E., & Theodore, N. D.