Diffusion of antimony in silicon in the presence of point defects Academic Article uri icon

abstract

  • We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted. 2007 Elsevier B.V. All rights reserved.

published proceedings

  • NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

author list (cited authors)

  • Yu, X., Ma, K. B., Chen, Q. Y., Wang, X., Liu, J., Chu, W., Shao, L., & Thompson, P. E.

citation count

  • 0

complete list of authors

  • Yu, Xiangkun||Ma, KB||Chen, QY||Wang, Xuemei||Liu, Jarui||Chu, Wei-Kan||Shao, Lin||Thompson, Phillip E

publication date

  • August 2007