Pulsed ion beam measurement of the time constant of dynamic annealing in Si. Academic Article uri icon

abstract

  • Under ion irradiation, all crystalline materials display some degree of dynamic annealing when defects experience evolution after the thermalization of collision cascades. The exact time scales of such defect relaxation processes are, however, unknown even for Si at room temperature. Here, we use a pulsed ion-beam method to measure a characteristic time constant of dominant dynamic annealing processes of about 6 ms in Si bombarded at room temperature with 500 keV Ar ions.

published proceedings

  • Phys Rev Lett

author list (cited authors)

  • Myers, M. T., Charnvanichborikarn, S., Shao, L., & Kucheyev, S. O.

citation count

  • 36

complete list of authors

  • Myers, MT||Charnvanichborikarn, S||Shao, L||Kucheyev, SO

publication date

  • August 2012