Boron doping in semiconductor device fabrication
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In semiconductor device fabrication, atoms of selected elements (e.g. B, P, As) are accelerated and implanted into Si to change the electrical properties in localized regions. Accelerator-based doping has been used by semiconductor industry since the 1970s but now is facing a great challenge due to the difficulties associated with controlling boron diffusion. Upon annealing, which removes ion irradiation damage and electrically activates implanted boron, diffusion of boron is enhanced due to interaction with Si interstitials in a phenomenon referred to as transient enhanced diffusion. This chapter covers fundamental concepts of boron doping and transient enhanced diffusion as well as current practices to achieve ultra shallow boron doping, which has been a technological bottleneck for the fabrication of next generation ultra large scale integrated circuits. Substrate engineering, an emerging technology in transistor fabrication, will be discussed. 2011 Nova Science Publishers, Inc. All rights reserved.
