Synthesis, thermal stability and the effects of ion irradiation in amorphous Si-O-C alloys Academic Article

abstract

• 2015 Elsevier B.V. All rights reserved. Abstract Amorphous films of Si-O-C alloys were synthesized via sputtering deposition at room temperature. These alloys were characterized using grazing incidence diffraction, both as a function of temperature and irradiation dose. It was found that the material retained its amorphous structure, both at high temperatures (up to 1200 C) and ion irradiation doses up to 1.0 dpa. The depth profile from photoemission spectroscopy provided evidence of the oxidation state of these alloys and their atomic composition. The studies suggest that Si-O-C alloys might belong to a group of radiation tolerant materials suitable for applications in reactor-like harsh environments.

authors

• Nastasi, Michael
• Shao, Lin

published proceedings

• NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

author list (cited authors)

• Santana, J., Mora, E. E., Price, L., Balerio, R., Shao, L., & Nastasi, M.

citation count

• 21

complete list of authors

• Santana, Juan A Colon||Mora, Elena Echeverria||Price, Lloyd||Balerio, Robert||Shao, Lin||Nastasi, Michael

publication date

• May 2015

publisher

• Elsevier  Publisher

published in

• Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  Journal

keywords

• Amorphous Materials
• Ion Irradiation
• Sputtering Deposition
• X-Ray Diffraction
• X-ray Photoemission

Digital Object Identifier (DOI)

• 10.1016/j.nimb.2015.02.074

start page

• 6

end page

• 13

volume

• 350

URL

• http://dx.doi.org/10.1016/j.nimb.2015.02.074