Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC

abstract

• 2016 IOP Publishing Ltd. Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25-200 C with 500 keV Ar ions. Results reveal a diffusion length of 10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. These results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.

authors

• Shao, Lin

published proceedings

• JOURNAL OF PHYSICS D-APPLIED PHYSICS

author list (cited authors)

• Aji, L., Wallace, J. B., Shao, L., & Kucheyev, S. O.

citation count

• 7

complete list of authors

• Aji, LB Bayu||Wallace, JB||Shao, L||Kucheyev, SO

publication date

• May 2016

publisher

• IOP Publishing  Publisher

keywords

• Defect Diffusion Length
• Radiation Damage
• Sic

Digital Object Identifier (DOI)

• 10.1088/0022-3727/49/19/19LT01

start page

• 19lt01

end page

• 19LT01

volume

• 49

issue

• 19

URL

• http://dx.doi.org/10.1088/0022-3727/49/19/19lt01