Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC
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2016 IOP Publishing Ltd. Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25-200 C with 500 keV Ar ions. Results reveal a diffusion length of 10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. These results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
author list (cited authors)
Aji, L., Wallace, J. B., Shao, L., & Kucheyev, S. O.
complete list of authors
Aji, LB Bayu||Wallace, JB||Shao, L||Kucheyev, SO