P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process Academic Article uri icon

abstract

  • ZnO thin films were grown on sapphire (0001) substrates by pulsed-laser deposition at 700C. 70keVN+ ion implantation was performed under various temperatures and fluences in the range of 300460C and 3.010141.21015cm2, respectively. Hall measurements indicate that the ZnO films implanted at 460C are p-type for all fluences used herein. Hole-carrier concentrations lie in the range of 2.410165.21017cm3, hole mobilities in the range of 0.73.7cm2V1s1, and resistivities between 1871cm. Transmission-electron microscopy reveals major microstructural differences between the n-type and p-type films. Ion implantation at elevated temperatures is shown to be an effective method to introduce increased concentrations of p-type N dopants while reducing the amount of stable post-implantation disorder.

published proceedings

  • APPLIED PHYSICS LETTERS

author list (cited authors)

  • Myers, M. A., Myers, M. T., General, M. J., Lee, J. H., Shao, L., & Wang, H.

citation count

  • 52

complete list of authors

  • Myers, MA||Myers, MT||General, MJ||Lee, JH||Shao, L||Wang, H

publication date

  • September 2012