Molecular dynamics simulation of damage cascade creation in SiC composites containing SiC/graphite interface Academic Article

abstract

• Silicon carbide composites have been investigated for their use as structural materials for advanced nuclear reactor designs. Although the composites have significantly enhanced mechanical properties and structure integrity, there is little known about the behavior of defects in the presence of a graphite- silicon carbide interface. In this study, molecular dynamics simulations have been used to model defect creation and clustering in a composite containing a SiC/graphite interface. Evolution of displacements as a function of time were studied and compared to bulk SiC. The results show that the first a few SiC atomic layers closest to the interface are easily damaged. However, beyond these first few atomic layers the system appears to be unaffected by the SiC interface. 2013 Elsevier B.V. All rights reserved.

authors

• Shao, Lin

published proceedings

• NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

author list (cited authors)

• Wallace, J., Chen, D. i., Wang, J., & Shao, L.

citation count

• 10

complete list of authors

• Wallace, Joseph||Chen, Di||Wang, Jing||Shao, Lin

publication date

• July 2013

publisher

• Elsevier  Publisher

published in

• Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  Journal

keywords

• Damage Cascade
• Interface
• Molecular Dynamics Simulations
• Sic Composite

Digital Object Identifier (DOI)

• 10.1016/j.nimb.2013.02.036

start page

• 81

end page

• 85

volume

• 307

URL

• http%3A%2F%2Fdx.doi.org%2F10.1016%2Fj.nimb.2013.02.036