Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories Academic Article uri icon

abstract

  • Novel nonvolatile universal memory technology is essential for providing required storage for nanocomputing. As a potential contender for the next-generation memory, the recently found the missing fourth circuit element, memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations, we develop a comprehensive set of properties and design equations for memristor based memories. Our analyses are specifically targeting key electrical memristor device characteristics relevant to memory operations. Using our derived properties, we investigate the design of read and write circuits and analyze important data integrity and noise-tolerance issues. © 2010 IEEE.

altmetric score

  • 3

author list (cited authors)

  • Ho, Y., Huang, G. M., & Li, P.

citation count

  • 220

publication date

  • October 2010