A K-Band Integrated Bandpass Filter in 90-nm CMOS Technology Conference Paper

abstract

• This paper investigates the design and implementation of integrated bandpass filters in standard 90-nm CMOS technology for K-band applications. A Chebyshev bandpass filter with a measured 7% 1-dB bandwidth at 20 GHz is realized using lumped-element components. Meanderline inductors are implemented using the thick metallization layer of the CMOS process to improve the filter quality factor. Metal-insulator-metal (MIM) capacitors are implemented using the thin SiO2 layer of the process to reduce the size of the filter. The effect of dense metal filling is considered in full-wave simulations to predict the filter response after fabrication. Measurement results show an insertion loss of 5 dB, a return loss better than 10 dB and an unloaded quality factor of 12.5 for the bandpass filter at 20 GHz. The reported filter is at least 10 times smaller compared to the equivalent microstrip-based filter at K-band frequency. 2010 IEEE.

name of conference

• 2011 IEEE Radio and Wireless Symposium

authors

• Entesari, Kamran

published proceedings

• 2011 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS)

author list (cited authors)

• Sekar, V., & Entesari, K.

citation count

• 0

complete list of authors

• Sekar, Vikram||Entesari, Kamran

publication date

• January 2011

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Radio and Wireless Symposium, RWS  Journal

keywords

• 40 Engineering
• 4009 Electronics, Sensors And Digital Hardware
• 51 Physical Sciences

Digital Object Identifier (DOI)

• 10.1109/RWS.2011.5725436

International Standard Book Number (ISBN) 13

• 9781424476855

start page

• 122

end page

• 125

volume

• 1

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Frws.2011.5725436