Optical diagnostics and novel effects
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abstract
Results on applying optical techniques for microscopic imaging of semiconductor and ceramic layers were presented. Titania films were irradiated with 7-ns pulses centered at 355 nm. The ratio of two peaks was monitored to observe laser-induced transformation of thin films from one phase to another. Crystal structure was imaged by a technique based on third harmonic generation. A method to image defects and stains was also discussed. Microscopic quantity of water solvable dye was added to water used for cleaning process. This dye monitored the distribution of water contaminates on the surface of silicon wafer. The sub-micron spatial resolution was achieved by using confocal fluorescence imaging.
