Diagnostics of surface layer disordering using optical third harmonic generation of a circular polarized light
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A nonlinear optical technique based on a third-harmonic generation of a circular polarized light is proposed for the diagnostics of order-disorder transformations in semiconductors. Applications of this technique to study both noncentrosymmetric (GaAs) and centrosymmetric (Si) materials are demonstrated. © 2001 American Institute of Physics.
author list (cited authors)
Yakovlev, V. V., & Govorkov, S. V.