Optoelectronic parametric amplification in a microstrip ring resonator on GaAs substrate Academic Article

abstract

• Nonlinear interaction between an optically modulated RF input and a microwave LO (local oscillator) in a nonlinear microstrip ring resonator on a semi-insulating GaAs (gallium arsenide) substrate is investigated. When the capacitive reactance of the detector is modulated, a parametric amplification effect of the mixer occurs. In this device structure, a parametric amplification gain of 10 dB without applied bias in the RF signal is obtained. This microwave optoelectronic mixer can be used in fiber-optic communication links.

authors

• Weichold, Mark

published proceedings

• JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS

author list (cited authors)

• Lee, J. C., Yeh, C. L., Ho, C. H., Taylor, H. F., Weichold, M. H., & Chang, K.

citation count

• 2

complete list of authors

• Lee, JC||Yeh, CL||Ho, CH||Taylor, HF||Weichold, MH||Chang, K

publication date

• June 1997

publisher

• IOP Publishing  Publisher

published in

• Japanese Journal of Applied Physics  Journal

keywords

• Gaas
• Microstrip
• Mixer
• Optoelectronics
• Parametric Amplification
• Ring Resonator

Digital Object Identifier (DOI)

• 10.1143/JJAP.36.L774

start page

• L774

end page

• L776

volume

• 36

issue

• 6B

URL

• http%3A%2F%2Fdx.doi.org%2F10.1143%2Fjjap.36.l774