Low‐frequency noise measurements on AlGaAs/GaAs resonant tunnel diodes
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An experimental apparatus and procedure using noise measurement techniques in order to identify conduction mechanisms in resonant tunnel diodes (RTDs) due to defect-assisted tunneling is developed. The theory of noise measurements is discussed as the basis for the appropriate modeling of RTD noise data. Nonlinear and linear algorithms are developed to model these data and simulation test results are presented. Equipment target specifications are outlined and a functional equipment setup and procedure are also discussed. Sample results of a RTD noise measurement and of a determination of activation energy and capture cross section are presented.
author list (cited authors)
Weichold, M. H., Villareal, S. S., & Lux, R. A.