A phenomenological memristor model for short-term/long-term memory Academic Article

abstract

• 2014 Elsevier B.V. All rights reserved. Memristor is considered to be a natural electrical synapse because of its distinct memory property and nanoscale. In recent years, more and more similar behaviors are observed between memristors and biological synapse, e.g., short-term memory (STM) and long-term memory (LTM). The traditional mathematical models are unable to capture the new emerging behaviors. In this article, an updated phenomenological model based on the model of the Hewlett-Packard (HP) Labs has been proposed to capture such new behaviors. The new dynamical memristor model with an improved ion diffusion term can emulate the synapse behavior with forgetting effect, and exhibit the transformation between the STM and the LTM. Further, this model can be used in building new type of neural networks with forgetting ability like biological systems, and it is verified by our experiment with Hopfield neural network.

authors

• Huang, Tingwen

published proceedings

• PHYSICS LETTERS A

altmetric score

• 1

author list (cited authors)

• Chen, L., Li, C., Huang, T., Ahmad, H. G., & Chen, Y.

citation count

• 28

complete list of authors

• Chen, Ling||Li, Chuandong||Huang, Tingwen||Ahmad, Hafiz Gulfam||Chen, Yiran

publication date

• August 2014

publisher

• Elsevier  Publisher

published in

• Physics Letters, Section A: General, Atomic and Solid State Physics  Journal

keywords

• Forgetting Effect
• Ion Diffusion
• Long-term Memory
• Memristor
• Short-term Memory

Digital Object Identifier (DOI)

• 10.1016/j.physleta.2014.08.018

start page

• 2924

end page

• 2930

volume

• 378

issue

• 40

URL

• http%3A%2F%2Fdx.doi.org%2F10.1016%2Fj.physleta.2014.08.018