THICKNESS OF GAP LIQUID-PHASE EPITAXIAL LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, AND RAMP-COOLING METHODS
Academic Article
Overview
Identity
Additional Document Info
Other
View All
Overview
abstract
Using three different cooling processes, a series of liquid phase epitaxial growth experiments for GaP are performed to determine layer thickness, d, as a function of growth time, t, and amount of supercooling temperature, . Comparison is made with layer thickness predictions that are derived from a diffusion-controlled model. Good agreement is obtained for growth times, t, less than the diffusion time, , of solute in the melt. The results indicate that, in addition to GaAs and InP, the diffusion-controlled model generally provides good predictions for liquid phase epitaxial grown GaP layers thickness as well.