Admittance Behavior in GaAs Schottky IMPATT Diodes.
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abstract
The admittance behavior of high efficiency, high power, low-high-low GaAs Schottky IMPATT diodes is significantly different than those of Si Read type IMPATT structures. Using small signal analysis, the admittance of such low-high-low structures is investigated and the influence of the multiplication factor, recombination current and dielectric relaxation are included. Calculations obtained on the basis of the analysis support in general the experimental behavior observed in such diodes. Specifically, it is observed that the order in which the cutoff and resonant frequencies occur, for such structured devices, are substantially different from those of silicon devices. Based on the supportive agreement, an improved lumped elements equivalent circuit model is suggested.
